Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
IXYS introduce the D3Pak-HV package (TO-268 HV) that offers high voltage capability due to the 1200V rating designed in the creepage distance. The products introduced in the TO-268HV packages are Fast ...
The QRD3310001, QRC3310001, QRD3310002, and QRC3310002 dual fast-recovery diode modules specify a blocking voltage of 3.3V, maximum fast recovery time of 1.2 µs, and an isolation voltage of 6 kV.
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