Abstract: This work presents the design and characterization of modular and compact GaN power ICs with power HEMT, gate driver, temperature sensor, current sense-FET and amplifier. These GaN ICs give ...
Abstract: Ka-band three-stage MMIC driver amplifier with a Y-junction combiner is presented based on 0.15 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The compensated ...
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